产品别名 |
F2305X,2305X,耐压18V PMOS,内阻28mΩ PMOS |
面向地区 |
封装 |
SOT-23 |
Description
The YF2305X uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The
complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other
applications.
General Features
●P-Channel
VDS =-18V,ID =-5.5A
RDS(ON) < 34mΩ @ VGS=-4.5V
RDS(ON) < 50mΩ @ VGS=-2.5V
